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30011 MRF848 LH28F VTS5754A 5KE15 34286G2 05100 PWT100
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? %"    %"    %"    %"    ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0246810 0 50 100 150 200 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 100a i c =40a 200a 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =125 100a i c =40a 200a 0 2 4 6 8 10 12 14 16 0 100 200 300 400 0 50 100 150 200 250 300 350 400 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =300v 200v 100v r l =3 t c =25 0.2 0.5 1 2 5 10 20 50 100 200 50 100 200 500 1000 2000 5000 10000 20000 50000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mhz t c =25 0 20 40 60 80 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 collector current i c (a) switching time t ( s) fig.6- collector current vs. switching time (typical) toff v cc =300v r g =7.5 v ge = 15v t c =25 ton tr tf
? ? %"    %"    %"    %"    ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 1 10 100 0.05 0.1 0.2 0.5 1 2 5 series gate impedance r g ( ) switching time t ( s) fig.7- series gate impedance vs. switching time (typical) v cc =300v i c =100a v g = 15v t c =25 tf tr ton toff 01234 0 20 40 60 80 100 120 140 160 180 200 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 0 100 200 300 400 500 600 5 10 20 50 100 200 500 -di/dt (a/ s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i rrm trr i f =100a t c =25 0 200 400 600 800 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area (typical) r g =7.5 v ge = 15v t c Q 125 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 1x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 1 time t (s) transient thermal impedance rth (j-c) ( /w) fig.11- transient thermal impedance t c =25 1 shot pulse frd igbt


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